savantic semiconductor product specification silicon pnp power transistors 2SB703 description with to-220c package complement to type 2sd743 high power dissipation applications designed for use in audio frequency power amplifier,low speed switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -4 a i cm collector current-peak -6 a i b base current -1 a p d total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 3.125 /w
savantic semiconductor product specification 2 silicon pnp power transistors 2SB703 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -80 v v (br)cbo collector-base breakdown voltage i c =-1.0ma; i e =0 -80 v v (br)ebo emitter-base breakdown votage i e =-1.0ma; i c =0 -5 v v cesat collector-emitter saturation voltage i c =-3a;i b =-0.3a -2.0 v v besat base-emitter saturation voltage i c =-3a;i b =-0.3a -2.0 v i cbo collector cut-off current v cb =-80v; i e =0 -10 a i ebo emitter cut-off current v eb =-3v; i c =0 -10 a h fe-1 dc current gain i c =-20ma ; v ce =-5v 30 h fe-2 dc current gain i c =-500ma ; v ce =-5v 40 200 f t transition frequency i c =-100ma ; v ce =-5v,f=1mhz 10 mhz h fe-2 classifications s r q 40-80 60-120 100-200
savantic semiconductor product specification 3 silicon pnp power transistors 2SB703 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
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